Assignemnt questions for ECE-B and Mech-C

1.Explain with diagram the bonding nature and the structure of Germanium and Silicon. (with electronic
   configuration )
2.Show that carrier concn. of electrons and holes in intrinsic semiconductor are equal (derivative)
3.Bring out the equations and explain shortly about the Fermi level position of an intrinsic semiconductor at
   room temperature and at absolute zero.
4.Increase in KBT energy increases the ionisation of donors thereby carrier concn. increases in CB . Using  
   this concept how will you determine the bandgap of intrinsic semiconductor?
5.Define these concepts : a) Dopant  b) donors  c) acceptors  d) donor energy level e) acceptor energy
   level.
6.Sketch the variation of Fermi level with carrier concentration neatly for N and P types.
7.Define Hall effect
8.Why there is a correction applied to Hall coefficient RH?
9.Differentiate Direct and Indirect Band gap semiconductors?
10.Explain giving  examples the elemental semiconductors and compound semiconductors.